Self-adjusting reference current for a memory

A memory device comprising:

• a memory sector comprising a plurality of memory cells;
• a reference sector comprising a plurality of reference memory cells, wherein each of the plurality of reference memory cells is configured to provide a corresponding reference current to an averaging node as a collected reference current;
• a dividing circuit connected to the averaging node, wherein the dividing circuit is configured to generate an averaged reference read current based on dividing the collected reference current by an averaging factor;
• and
• a shifting circuit configured to inject a shift current into the averaging node in order to shift the averaged reference read current based on the injected shift current, wherein the shifting circuit comprises a configurable resistive network, wherein the injected shift current is based on a configured resistance value of the configurable resistive network.

A method for reading memory cells of a memory, the method comprising:

• collecting reference sector currents from one or more reference memory cells of the memory;
• generating a reference read current by:
• dividing the collected reference sector currents by an averaging factor to generate an averaged reference read current;
• and
• injecting a shift current in order to shift the averaged reference read current based on the injected shift current, wherein the injected shift current is based on a configured resistance value of a configurable resistive network;
• and
• reading one or more of the memory cells of the memory using the generated reference read current.