Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance device

A memory device, comprising:

• a driver configured to generate a read voltage and a write voltage to perform a read operation and a write operation in the memory device;
• a sense amplifier;
• a data output, configured to receive an input from the sense amplifier and generate an output;
• a memory cell array, wherein the memory cell array comprising:
• at least one memory cell,
• wherein the at least one memory cell comprising:
• a switch, a first terminal of the switch is coupled to a common source line and a control terminal of the switch is coupled to a word line;
• a memory element;
• and
• a negative resistance device,
• wherein the memory element is coupled between a second terminal of the switch and a first terminal of the negative resistance device, and a second terminal of the negative resistance device is coupled to a bit line,
• wherein during the read operation in the memory device, the read voltage greater than a predetermined threshold voltage of the negative resistance device is applied to the negative resistance device for making the negative resistance device enter into a negative resistance state.