Gate driving circuit including first voltage stabilizing unit, driving method, and display panel

A display panel, comprising a gate driving circuit, wherein the gate driving circuit comprises:

• a pull-up control module, wherein the pull-up control module is connected to a pull-up node, and the pull-up control module is configured to control a potential of the pull-up node;
• a pull-up module, wherein the pull-up module is connected to the pull-up node, and the pull-up module is configured to output a driving signal according to the potential of the pull-up node;
• a pull-down control module, wherein the pull-down control module is connected to a pull-down node and the pull-up control module, and the pull-down control module is configured to control a potential of the pull-down node;
• a pull-down module, wherein the pull-down module is connected to the pull-down node and the pull-up module, and the pull-down module is configured to output the driving signal according to the potential of the pull-down node;
• and
• a voltage stabilizing module, wherein the voltage stabilizing module is connected to the pull-down node and the pull-up control module, and the voltage stabilizing module is configured to reduce a leakage current of the pull-down node in a high potential state and maintain a level of the pull-down node in a low potential state;
• wherein the voltage stabilizing module comprises:
• a leakage control unit connected to the pull-down node and configured to output a trigger signal to reduce the leakage current in response to the high potential state of the pull-down node;
• and
• a first voltage stabilizing unit connected to the leakage control unit and the pull-down node, and configured to reduce the leakage current of the pull-down node according to the trigger signal and to pull down the potential of the pull-down node in response to the high potential of the pull-up node and the low potential of the pull-down node;
• and
• wherein the first voltage stabilizing unit comprises a first transistor and a second transistor;
• one of source/drain electrodes of the first transistor is directly connected to the pull-down node, another one of the source/drain electrodes of the first transistor is connected to the leakage control unit, and a gate electrode of the first transistor is directly connected to a first driving line;
• and
• one of the source/drain electrodes of the second transistor is connected to the another one of the source/drain electrodes of the first transistor, another one of the source/drain electrodes of the second transistor is connected to a first low potential line, and a gate electrode of the second transistor is directly connected to the first driving line.

A driving method, wherein the driving method comprises:

• controlling a potential of a pull-up node according to a first driving signal by a pull-up control module;
• controlling a potential of a pull-down node according to a second driving signal and a stage transmission signal by a pull-down control module;
• reducing a leakage current of the pull-down node in a high potential state and maintaining a level of the pull-down node in a low potential state according to the first driving signal and the potential of the pull-up node by a voltage stabilizing module, wherein the voltage stabilizing module comprises a leakage control unit and a first voltage stabilizing unit, the leakage control unit is connected to the pull-down node and is configured to output a trigger signal to reduce the leakage current in response to the high potential state of the pull-down node, and the first voltage stabilizing unit is connected to the leakage control unit and the pull-down node and is configured to reduce the leakage current of the pull-down node according to the trigger signal and to pull down the potential of the pull-down node in response to the high potential of the pull-up node and the low potential of the pull-down node;
• and wherein the first voltage stabilizing unit comprises a first transistor and a second transistor, one of source/drain electrodes of the first transistor is directly connected to the pull-down node, another one of the source/drain electrodes of the first transistor is connected to the leakage control unit, a gate electrode of the first transistor is directly connected to a first driving line, one of the source/drain electrodes of the second transistor is connected to the another one of the source/drain electrodes of the first transistor, another one of the source/drain electrodes of the second transistor is connected to a first low potential line, and a gate electrode of the second transistor is directly connected to the first driving line;
• pulling up and maintaining a potential of the driving signal according to the potential of the pull-up node by a pull-up module;
• and
• pulling down and maintaining the potential of the driving signal according to the potential of the pull-down node by a pull-down module.