Storage controller receiving read data and distribution information, method of operating the same, and method of operating storage device including the same

A method of operating a storage device that includes a non-volatile memory device and a storage controller, the method comprising:

• providing, by the storage controller, a read command to the non-volatile memory device;
• performing, by the non-volatile memory device, an on-chip read operation based on the read command;
• while providing, by the non-volatile memory device, the storage controller with read data, concurrently providing distribution information corresponding to the read data;
• determining, based on the read data and by the storage controller, that an error of the read data is correctable;
• and
• subsequent to determining that the error of the read data is correctable updating, by the storage controller, offset information of a history table in the storage controller based on the distribution information.

A storage controller comprising:

• a command manager configured to provide a read command to a non-volatile memory device;
• a buffer memory configured to, while receiving first read data, concurrently receive first distribution information corresponding to the first read data from the non-volatile memory device;
• an error correcting code (ECC) engine configured to communicate with the buffer memory and to decode the first read data, wherein the command manager is operable to control the ECC engine;
• and
• a history table configured to manage offset information,
• wherein the command manager is configured to
• determine whether an error of the first read data is correctable, based on a decoding of the first read data by the ECC engine, and
• perform a subsequent operation subsequent to determining whether the error of the first read data is correctable, wherein performing the subsequent operation includes
• subsequent to determining that the error of the first read data is correctable, updating the offset information of the history table based on the first distribution information of the buffer memory, or
• subsequent to determining that the error of the first read data is not correctable, determining a read retry voltage level based on the first distribution information.