Chamber and methods of treating a substrate after exposure to radiation

A method for processing a substrate, comprising:

• flowing a process gas into a plasma formation region;
• forming a first plasma with a first ion density from the process gas in the plasma formation region;
• flowing the first plasma through a diffuser and into a process region and forming a second plasma with a second ion density less than the first ion density;
• applying an electric field across the second plasma within the process region between a substrate and the diffuser, the electric field driving charged particles of a resist layer disposed on the substrate in a first direction without exposing the resist layer;
• and
• baking the resist layer formed on the substrate by heating the substrate using one or more heating devices within a substrate support while applying the electric field across the substrate.

A method for processing a substrate, comprising:

• flowing an inert gas into a plasma formation region;
• forming a first plasma with a first ion density from the inert gas in the plasma formation region;
• flowing the first plasma through an ion blocker plate and into a process region to form a second plasma with a second ion density of 104 ions/cm3 to 106 ions/cm3;
• applying an electric field across the second plasma within the process region between a substrate support and the ion blocker plate;
• and
• baking a resist layer formed on a substrate disposed on the substrate support by heating the substrate using one or more heating devices while applying the electric field across the substrate.