Extreme ultraviolet photolithography method with developer composition

A method comprising

• forming a material layer on a substrate;
• forming a photoresist layer on the material layer, wherein a composition of the photoresist layer includes a metal-containing component;
• performing an exposing process to the photoresist layer;
• prior to etching the material layer, performing a first developing process to the photoresist layer using a first developer, the first developer including a first solvent and a chemical additive;
• and
• performing a second developing process to the photoresist layer using a second developer that has a different material composition than the first developer, wherein the second developer is free of the chemical additive, wherein the performing of the first and second developing processes on the photoresist layer forms a patterned photoresist layer.

A method comprising:

• forming a material layer on a substrate;
• forming a photoresist layer on the material layer, wherein a composition of the photoresist layer includes a metal-containing component;
• performing an exposing process to the photoresist layer;
• and
• prior to performing any etching of the material layer, performing a development process on the photoresist layer that includes:
• applying a first developer having a first temperature to the photoresist layer;
• and
• applying a second developer having a second temperature to the photoresist layer, wherein the applying of the first and second developers forms a patterned photoresist layer that exposes a portion of the material layer, wherein the second developer has a different material composition than the first developer, wherein the second temperature is different than the first temperature.