Methods of forming low resistivity titanium nitride thin film in horizontal vias and related devices

A method of forming a conformal layer including titanium nitride (TiN) in a horizontal via on a substrate in a reaction chamber comprising:

• introducing a precursor into the reaction chamber according to a first exposure schedule, wherein the precursor includes non-halogenated metal-organic titanium, wherein the first exposure schedule indicates a plurality of precursor exposure periods, wherein each precursor exposure period of the plurality of precursor exposure periods is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor into the reaction chamber during the particular duration of time;
• introducing a co-reactant into the reaction chamber according to a second exposure schedule, wherein the co-reactant includes nitrogen, wherein the second exposure schedule indicates a plurality of co-reactant exposure periods, wherein each co-reactant exposure period of the plurality of co-reactant exposure periods is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant into the reaction chamber during the particular duration of time;
• and
• providing the conformal layer including TiN in the horizontal via based on said introducing a precursor into the reaction chamber said introducing the co-reactant into the reaction chamber.