Method for monitoring process conditions of, and method for controlling, a plasma PVD process

A plasma PVD process apparatus, comprising:

• a process chamber configured to comprise a target;
• a power supply arrangement configured to be connected to the target and configured to provide plasma discharges;
• a radio frequency generator configured to apply an oscillating voltage to the target when a plasma has been generated by means of the power supply arrangement;
• a radio frequency sensor configured to record a response from the applied oscillating voltage signal to the target;
• and
• a control device configured to derive information regarding at least one plasma process condition at the target based on the response recorded by the radio frequency sensor,
• wherein the response recorded by the radio frequency sensor comprises a response current amplitude and a current phase shift, and
• wherein the oscillating voltage is applied with a frequency of from 100 kHz to 1 MHz.

A method for monitoring process conditions in a plasma PVD process, the plasma PVD process performed in an apparatus comprising:

• a process chamber,
• a target arranged inside the process chamber,
• a power supply arrangement connected to the target and configured to generate plasma discharges,
• a radio frequency generator, and
• a radio frequency sensor;
• the method comprising the steps of:
• when a plasma has been generated by means of the power supply arrangement, applying an oscillating voltage signal to the target by means of the radio frequency generator;
• recording a response from the applied oscillating voltage signal by means of the radio frequency sensor;
• and
• based on the recorded response, deriving information regarding at least one plasma process condition in a vicinity of the target,
• wherein the step of recording a response from the applied oscillating voltage signal comprises recording a response current amplitude and a current phase shift, and
• wherein the oscillating voltage signal is applied with a frequency of from 100 kHz to 1 MHz.