RF sputtering apparatus for controlling atomic layer of thin film

An RF sputtering apparatus for controlling an atomic layer of a thin film, comprising:

• a sputtering main body including a substrate, a target facing the substrate, and a chamber for performing a sputtering process to deposit the target on the substrate;
• a power supply unit connected to the target of the sputtering main body via a network to apply RF power;
• a roughing pump unit for forming vacuum inside the chamber of the sputtering main body;
• and
• a gas supply unit for supplying reaction gas to the inside of the chamber,
• wherein a power cable for supplying a power source to the power supply unit is formed with a single crystal copper wire,
• wherein the network for transferring the RF power of the power supply unit to the sputtering main body is formed with a single crystal copper wire, and
• wherein an outdoor grounding part grounded on the power supply unit is formed with a single crystal copper bulk.