Titanium sputtering target, production method therefor, and method for producing titanium-containing thin film
AssigneeJX Advanced Metals Corporation
InventorsShuhei Murata, Daiki Shono
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Abstract
Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.
Claims20
A method for producing a titanium sputtering target, the method comprising the steps of:
- subjecting a cut titanium ingot having a purity of 4N (99.99% by mass) or more to strain processing to provide a processed sheet having a total strain amount of 2 or more;
- subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet;
- and
- subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less, wherein the titanium sputtering target produced has an average crystal grain diameter of 1 μm or less.
Dependencies are inferred from the claim text.