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US 12,180,403 B2Granted
Quantum dot, method of manufacturing quantum dot, and electronic element
AssigneeDuk San Neolux Co., Ltd.
InventorsDo Eon Kim, Jong Moon Shin, Chang Min Lee, Hyung Dong Lee
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Abstract
Provided are a quantum dot, a method of manufacturing the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including a first semiconductor nanocrystal and a doping metal. The first semiconductor nanocrystal includes a group II element, a group III element, and a group V element. The quantum dot has a narrower full width at half maximum (FWHM) and superior quantum efficiency, and manufactured in a simple manner.
Claims11
A quantum dot comprising:
- a core comprising a first semiconductor nanocrystal and a doping metal, the doping metal being positioned inside of the core;
- and
- a shell on the core comprising a second semiconductor nanocrystal,
- wherein the first semiconductor nanocrystal comprises a group II element, a group III element, and a group V element,
- the second semiconductor nanocrystal comprises a group II element and a group VI element,
- the doping metal is a material different from the group II element, the group III element, and the group V element of the first semiconductor nanocrystal and is selected from Sr, Ba, and Ca, and
- a ratio between the number of moles of the group III element of the first semiconductor nanocrystal and the number of moles of the doping metal ranges from 1:0.001 to 1:0.2.
4 more elements
A method of manufacturing a quantum dot, the method comprising:
- a step of forming a core comprising a first semiconductor nanocrystal and a doping metal, and
- a step of forming a shell on the core,
- wherein the first semiconductor nanocrystal comprises a group II element, a group III element, and a group V element,
- the second semiconductor nanocrystal comprises a group II element and a group VI element,
- the doping metal is a material different from the group II element, the group III element, and the group V element of the first semiconductor nanocrystal and is selected from Sr, Ba, Be, and Ca, and
- a ratio between the number of moles of the group III element of the first semiconductor nanocrystal and the number of moles of the doping metal ranges from 1:0.001 to 1:0.2.
3 more elements
Dependencies are inferred from the claim text.