Resistor geometry

A method for fabricating a thin-film resistor on a supporting structure, the thin-film resistor comprising a first terminal, a second terminal, and a resistor body providing a resistive current path between the first terminal and the second terminal, the method comprising:

• depositing a first layer of conductive material onto at least one of the supporting structure and the resistor body, applying a first lithographic process to the first layer, and etching the first layer to form the first terminal;
• and
• depositing a second layer of conductive material onto at least one of the supporting structure and the resistor body, applying a second lithographic process to the second layer, and etching the second layer to form the second terminal,
• wherein the first lithographic process is different to the second lithographic process, and a lateral separation of the first terminal and the second terminal is less than an in-plane minimum feature size of the first and second lithographic processes,
• wherein the lateral separation of the first terminal and the second terminal is non-zero, and
• wherein the second terminal and the resistor body are formed from separate thin-film layers of material.