Back to results
US 12,120,909 B2Granted
Display device
AssigneeSharp Kabushiki Kaisha
InventorManabu Niboshi
Life of this patent
Estimating the term…
Abstract
A display device includes a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed in this order from a thin film transistor layer side, and the first electrode includes a first transparent electrode, a reflective metal layer, and a semi-transparent metal layer in this order from the side opposite to the light-emitting layer.
Claims20
A display device comprising:
- a thin film transistor layer including thin-film transistors;
- a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed on the thin film transistor layer in this order from a side of the thin film transistor layer;
- and
- a sealing layer covering the light-emitting element layer,
- wherein the first electrode includes a first transparent electrode, a reflective metal layer, and a molybdenum silicide layer disposed, in this order, on the thin film transistor layer,
- the first electrode further includes a second transparent electrode disposed on the molybdenum silicide layer, and
- a layer thickness of the molybdenum silicide layer is in a range of 1 to 5 nm.
4 more elements
A display device comprising:
- a thin film transistor layer including thin-film transistors;
- a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed on the thin film transistor layer in this order from a side of the thin film transistor layer;
- and
- a sealing layer covering the light-emitting element layer,
- wherein the first electrode includes a first transparent electrode, a reflective metal layer, and a layer formed by at least one of tungsten silicide, tungsten oxide, and nickel oxide, and disposed, in this order, on the thin film transistor layer, and
- the first electrode further includes a second transparent electrode disposed on the layer, or between the reflective metal layer and the layer.
3 more elements
A display device comprising:
- a thin film transistor layer including thin-film transistors;
- a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed on the thin film transistor layer in this order from a side of the thin film transistor layer;
- and
- a sealing layer covering the light-emitting element layer,
- wherein the first electrode includes a first transparent electrode, a reflective metal layer, and a molybdenum silicide layer disposed, in this order, on the thin film transistor layer,
- the first electrode further includes a second transparent electrode disposed between the reflective metal layer and the molybdenum silicide layer, and
- a layer thickness of the molybdenum silicide layer is in a range of 1 to 5 nm.
4 more elements
Dependencies are inferred from the claim text.