Light emitting device comprising perovskite charge transport layer and manufacturing method thereof

A light emitting device comprising:

• an anode and a cathode;
• a light emitting layer disposed between the anode and the cathode;
• a first charge transport layer disposed between the anode and the light emitting layer, and functioning as a hole injection layer or a hole transport layer;
• and
• a second charge transport layer disposed between the light emitting layer and the cathode, and functioning as an electron injection layer or an electron transport layer,
• wherein the first charge transport layer or the second charge transport layer adjacent to the light emitting layer is a perovskite thin film,
• wherein the perovskite thin film is used as the second charge transport layer, an energy level of conduction band maximum (CBM) of the perovskite thin film is higher than an energy level of lowest unoccupied molecular orbital (LUMO) of the light emitting layer, and
• wherein a perovskite of the perovskite thin film has structure of ABX3, A2BX4, ABX4 or An−1PbnI3n+1 (n is an integer between 2 and 6), wherein A is an organic ammonium ion, an organic amidinium ions, organic phosphonium ions, alkali metal ions, Pb, Mn, Cu, Ga, Ge, In, Al, Sb, Bi, Po, Sn, Ni, Co, Fe, Cr, Pd, Cd, Ca, Sr, a combination or derivatives thereof, B is a transition metal, alkaline earth metal, organic material, inorganic material, ammonium, their derivatives, or a combination thereof, and X is a halogen ion or a combination of different halogen ions.