Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element

An electronic device, comprising:

• a solid-state imaging element, wherein the solid-state imaging element includes:
• one or more photoelectric conversion layers provided on one principal surface side serving as a light incidence plane of a semiconductor substrate;
• a penetrating electrode that is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and configured to transfer an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate;
• and
• a connection pad that is adjacent to and provided at a same level on the different principal surface side of the semiconductor substrate as a gate of an amplification transistor and to which a different end of the penetrating electrode is connected.

A manufacturing method of a solid-state imaging element, the manufacturing method comprising:

• a process of forming one or more photoelectric conversion layers on one principal surface side serving as a light incidence plane of a semiconductor substrate;
• a process of forming, in a pixel area, a penetrating electrode that is connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and configured to transfer an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate;
• and
• a process of forming a connection pad adjacent to and at a same level on the different principal surface side of the semiconductor substrate as a gate of an amplification transistor to which a different end of the penetrating electrode is connected.