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US 12,120,893 B2Granted
Interconnection structures for perovskite tandem solar cells
AssigneeThe University of North Carolina at Chapel Hill
InventorsJinsong Huang, Zhenhua Yu
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Abstract
The present disclosure is directed to double junction tandem perovskite solar cells having a n+/n interconnection layer comprising an ion-doped fullerene layer and a metal oxide layer. In certain embodiments, the metal oxide is SnO2-x (0<x<1). The ion-doped fullerene and metal oxide layers form Ohmic contacts with the wide bandgap and narrow bandgap perovskite sub cells and demonstrate low resistivity and high power conversion efficiencies.
Claims24
A double junction tandem perovskite solar cell comprising:
- a transparent conductive substrate;
- a hole transport layer disposed on said conductive substrate;
- a wide bandgap perovskite layer disposed on said hole transport layer;
- an X layer disposed on said wide bandgap perovskite layer;
- an interconnection layer disposed on said X layer, wherein said interconnection layer consists essentially of:
- an ion-doped fullerene layer;
- and,
- a SnO2-x(0<x<1) layer having a thickness of about 2 nm to about 200 nm;
- wherein x is from about 0.5 to about 0.95, and
- a Y layer disposed on said SnO2-x (0<x<1) layer of said interconnection layer;
- a narrow bandgap perovskite layer disposed on said Y layer;
- an electron transport layer disposed on said narrow bandgap perovskite layer;
- and
- an electrode disposed on said electron transport layer,
- wherein
- said Y layer does not comprise a conductive transparent oxide material;
- said X layer is absent or present, and when absent, said ion-doped fullerene layer is disposed on said wide bandgap perovskite layer;
- and
- said Y layer is absent or present, and when absent, said narrow bandgap perovskite layer is disposed on said metal oxide layer;
- or,
- a double junction tandem perovskite solar cell comprising:
- a transparent conductive substrate;
- an electron transport layer disposed on said conductive substrate;
- a wide bandgap perovskite layer disposed on said electron transport layer;
- a Y layer disposed on said wide bandgap perovskite layer;
- an interconnection layer disposed on said Y layer, wherein said interconnection layer consists essentially of:
- an ion-doped fullerene layer;
- and,
- a SnO2-x(0<x<1) layer having a thickness of about 2 nm to about 200 nm;
- wherein x is from about 0.5 to about 0.95, and
- an X layer disposed on said SnO2-x(0<x<1) layer of said interconnection layer;
- a narrow bandgap perovskite layer disposed on said X layer;
- a hole transport layer disposed on said narrow bandgap perovskite layer;
- and
- an electrode disposed on said hole transport layer,
- wherein
- said Y layer does not comprise a conductive transparent oxide material;
- said X layer is absent or present, and when absent, said narrow bandgap perovskite layer is disposed on said ion-doped fullerene layer;
- and
- said Y layer is absent or present, and when absent, said metal oxide layer is disposed on said wide bandgap perovskite layer.
37 more elements
Dependencies are inferred from the claim text.