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US 12,120,890 B2Granted
Tunnel magnetoresistive effect element, magnetic memory, and built-in memory
AssigneeTDK Corporation
InventorsZhenyao Tang, Tomoyuki Sasaki
Life of this patent
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Abstract
A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.
Claims21
A tunnel magnetoresistive effect element comprising:
- a lower electrode layer;
- an upper electrode layer;
- a stack portion including a magnetic tunnel junction arranged between the lower electrode layer and the upper electrode layer;
- and
- a minute particle region
- arranged outside of the magnetic tunnel junction,
- including a region extending along a side surface of the stack portion, and
- including a plurality of minute metal particles dispersed in an insulation material.
5 more elements
Dependencies are inferred from the claim text.