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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsChristelle Charpin-Nicolle, Florian Pebay-Peyroula, Rémy Gassilloud, Nicolas Guillaume
Estimating the term…
A method for manufacturing a microelectronic device including resistive memory points, a first portion of the memory points forming a physical unclonable function, the memory points of the first portion forming a PUF zone, a second portion of the memory points providing a memory function, the memory points of the second forming a memory zone, the method including providing a support including a first electrode layer and an active oxide resistive memory layer; etching the active oxide resistive memory layer in the PUF zone; etching the active oxide resistive memory layer in the memory zone, the etching in the memory zone producing a dispersion of roughness of the oxide layer less than the dispersion of roughness produced by the etching in the PUF zone; depositing a second electrode layer; etching the second electrode layer, the active oxide layer and the first electrode layer to define the memory points.
A method for manufacturing a microelectronic device comprising a plurality of resistive memory points, a first portion of said resistive memory points being configured to form a physical unclonable function, the resistive memory points of said first portion forming a physical unclonable function (PUF) zone of the device, a second portion of said resistive memory points being configured to provide a memory function to the microelectronic device, the resistive memory points of the second portion forming a memory zone of the device, said method comprising:
A microelectronic device comprising a plurality of resistive memory points, a first portion of said resistive memory points being configured to form a physical unclonable function, the resistive memory points of said first portion forming a PUF zone of the device, a second portion of said resistive memory points being configured to provide a memory function to the microelectronic device, the resistive memory points of the second portion forming a memory zone of the device, each resistive memory point comprising a first electrode layer and a second electrode layer, the first and second electrode layer being separated by an active oxide resistive memory layer, wherein the active oxide layer of the resistive memory points of the PUF zone has a dispersion of roughness and a variation in thickness that are higher than a dispersion of roughness and the variation in thickness of the resistive oxide layer of the memory points of the memory zone.
Dependencies are inferred from the claim text.