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US 12,120,887 B2Granted
Increasing selector surface area in crossbar array circuits
AssigneeTetraMem Inc.
InventorsMinxian Zhang, Ning Ge
Life of this patent
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Abstract
The present application provides an apparatus, including: a substrate; a first line electrode formed on the substrate; an interlayer formed on the first line electrode, a selector stack formed on the interlayer and the first line electrode; an RRAM stack formed on the selector stack; and a second line electrode formed on the RRAM stack. The interlayer comprises an upper surface and a sidewall. In some embodiments, a shape of the interlayer comprises a cylinder, a pyramid, a prism, a cone, a pillar, or a protrusion.
Claims11
An apparatus, comprising:
- a substrate;
- a first line electrode formed on the substrate;
- an interlayer of a dielectric material, wherein the interlayer is formed on the first line electrode, wherein the interlayer comprises an upper surface and a sidewall, and wherein a shape of the interlayer comprises a cylinder, a pyramid, a prism, a cone, a pillar, or a protrusion;
- a selector stack formed on the interlayer and the first line electrode, wherein the selector stack is formed on the upper surface of the interlayer extending along the sidewall of the interlayer and is formed on a top surface of the first line electrode;
- an RRAM stack formed on the selector stack;
- and
- a second line electrode formed on the RRAM stack.
4 more elements
Dependencies are inferred from the claim text.