Semiconductor device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Yu Ling, Katherine H. Chiang, Chung-Te Lin
Life of this patent
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Abstract
A method of manufacturing a memory cell includes the following steps. A channel material is formed to contact a source line and a bit line. A ferroelectric (FE) material is formed to contact the channel material. A word line is formed to contact the FE material. The FE material is disposed between the channel material and the word line. The word line includes a bulk layer. The bulk layer includes a first metal layer and a second metal layer. The second metal layer is sandwiched between the first metal layer and the FE material.
Claims20
A method of manufacturing a memory cell, the method comprising:
- forming a channel material contacting a source line and a bit line;
- forming a ferroelectric (FE) material contacting the channel material;
- and
- forming a word line, wherein the FE material is disposed between the channel material and the word line, and the word line comprises a bulk layer, and the bulk layer comprises:
- a first metal layer;
- and
- a second metal layer, wherein the second metal layer is sandwiched between the first metal layer and the FE material.
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate;
- forming a first memory cell over the substrate, the forming the first memory cell comprising forming a first thin film transistor, wherein the forming the first thin film transistor comprises:
- forming a first word line, wherein the first word line comprises a first bulk layer, and the first bulk layer comprises:
- a first metal layer;
- and
- a second metal layer on a sidewall of the first metal layer;
- and
- forming a ferroelectric (FE) material, wherein a first portion of the ferroelectric (FE) material contacts a sidewall of the second metal layer of the first word line, and the first metal layer is separated from the first portion of FE material by the second metal layer;
- and
- forming a channel material, wherein a first portion of the channel material is disposed on sidewalls of the first portion the ferroelectric material, a source line and a bit line, wherein the FE material is disposed between the channel material and the second metal layer of the word line;
- and
- forming a second memory cell over the first memory cell.
A method of manufacturing a semiconductor device, the method comprising:
- providing a first multilayer stack, the first multilayer stack comprising alternating dielectric layers and conductive layers, and the first multilayer stack has a first trench and a second trench therein;
- removing portions of the conductive layers and thereby forming sidewall grooves at ends of the conductive layers;
- and
- forming anti-oxidation layers in the sidewall grooves, wherein the anti-oxidation layers and the conductive layers form a plurality of word lines.
Dependencies are inferred from the claim text.