Semiconductor memory device using a ferroelectric characteristic of charge storage layer and operating method thereof

A semiconductor memory device comprising:

• a substrate including second parts and a first part between the second parts;
• a tunnel insulating layer including second parts and a first part between the second parts of the tunnel insulating layer, and contacting the first part of the substrate;
• a charge storage layer contacting the first part of the tunnel insulating layer and including a ferroelectric material;
• a barrier insulating layer filling space between two adjacent charge storage layers and contacting the second parts of the tunnel insulating layer and the charge storage layer;
• and
• a gate electrode contacting the barrier insulating layer,
• wherein the tunnel insulating layer, the charge storage layer, the barrier insulating layer, and the gate electrode are sequentially stacked on the substrate.