Semiconductor device including channel structure and through electrode, electronic system, and method of forming the same

A semiconductor device comprising:

• a lower structure comprising a plurality of lower wirings;
• a horizontal wiring layer disposed on the lower structure, the horizontal wiring layer comprising a horizontal conductive layer and a horizontal insulating layer extending through the horizontal conductive layer;
• a stack structure on the horizontal wiring layer;
• a channel structure extending into the horizontal wiring layer while extending through the stack structure;
• and
• a plurality of cell contact plugs connected to the plurality of lower wirings while extending through the stack structure and the horizontal insulating layer,
• wherein the stack structure comprises:
• a plurality of insulating layers and a plurality of electrode layers repeatedly alternately stacked, and
• an interlayer insulating layer disposed at side surfaces of the plurality of insulating layers and the plurality of electrode layers,
• wherein each of the plurality of cell contact plugs comprises:
• a first portion extending into the horizontal insulating layer while extending through the plurality of insulating layers and the plurality of electrode layers, and
• a second portion disposed between the first portion and the plurality of lower wirings, the second portion having a smaller horizontal width than the first portion, and
• wherein each of the plurality of cell contact plugs is connected to a corresponding one of the plurality of electrode layers.

An electronic system comprising:

• a main substrate;
• a semiconductor device on the main substrate;
• and
• a controller electrically connected to the semiconductor device on the main substrate,
• wherein the semiconductor device comprises:
• a lower structure comprising a plurality of lower wirings,
• a horizontal wiring layer disposed on the lower structure, the horizontal wiring layer comprising a horizontal conductive layer and a horizontal insulating layer extending through the horizontal conductive layer,
• a stack structure on the horizontal wiring layer,
• a channel structure extending into the horizontal wiring layer while extending through the stack structure, and
• a through electrode connected to the plurality of lower wirings while extending through the stack structure and the horizontal insulating layer,
• wherein the stack structure comprises:
• a plurality of insulating layers and a plurality of electrode layers repeatedly alternately stacked, and
• an interlayer insulating layer disposed at side surfaces of the plurality of insulating layers and the plurality of electrode layers, and
• wherein the through electrode comprises:
• a first portion extending into the interlayer insulating layer, and
• a second portion disposed between the first portion and the plurality of lower wirings, the second portion having a smaller horizontal width than the first portion.