Semiconductor structure and manufacturing method thereof

A manufacturing method of a semiconductor structure, the semiconductor structure having an array area and a circuit area, wherein the method comprises:

• providing a substrate;
• forming at least one storage capacitor unit on the substrate, wherein the at least one storage capacitor unit is located at the array area, and each storage capacitor unit comprises:
• N insulation posts, distributed in a direction parallel to a surface of the substrate;
• a bottom electrode layer, covering top surfaces and side surfaces of the insulation posts;
• a top electrode layer, directly facing the bottom electrode layer;
• and a capacitor dielectric layer, located between the top electrode layer and the bottom electrode layer, wherein one of the bottom electrode layer corresponding to the N insulation posts or the top electrode layer corresponding to the N insulation posts is a continuous film layer, and another of the bottom electrode layer corresponding to the N insulation posts or the top electrode layer corresponding to the N insulation posts is discrete film layers, and N is a natural number greater than or equal to 2;
• forming a transistor at the circuit area, wherein the transistor comprises a capacitor control terminal located in the substrate of the circuit area;
• and
• forming an electrical connection structure, wherein the electrical connection structure is electrically connected to the capacitor control terminal, and extends from the circuit area to the array area to come into contact with a corresponding discrete film layer.