Semiconductor structure and method for forming semiconductor structure

A method for forming a semiconductor structure, comprising:

• providing a substrate, the substrate comprising a first region and a second region;
• forming an insulating layer on the substrate, the insulating layer covering the first region and the second region;
• etching a portion of the insulating layer in the second region, the insulating layer in the first region being configured as a first insulating layer, a remaining portion of the insulating layer in the second region being configured as a second insulating layer, and a surface on a side of the second insulating layer away from the substrate being lower than a surface on a side of the first insulating layer away from the substrate;
• forming a barrier layer covering the first insulating layer and a barrier layer covering the second insulating layer, the barrier layer on the first insulating layer being configured as a first barrier layer, the barrier layer on the second insulating layer being configured as a second barrier layer, and a thickness of the second barrier layer being greater than a thickness of the first barrier layer;
• etching a portion of the first barrier layer, a portion of the second barrier layer and a portion of the first insulating layer to form a through hole, which exposes the substrate, in the first insulating layer, and to form a hole segment, which does not expose the second insulating layer, in the second barrier layer;
• and
• removing the first barrier layer and the second barrier layer.