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US 12,119,620 B2Granted
Edge emitting laser diode and method for producing same
AssigneeOSRAM Opto Semiconductors GmbH
InventorJens Ebbecke
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Abstract
The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.
Claims11
An edge emitting laser diode comprising:
- a semiconductor layer stack whose growth direction defines a vertical direction;
- and
- wherein the semiconductor layer stack comprises an active layer and a waveguide layer;
- characterized in that
- a thermal stress element is arranged in at least indirect contact with the semiconductor layer stack;
- wherein the thermal stress element is configured for generating a thermally induced mechanical stress in the waveguide layer which counteracts the formation of a thermal lens,
- wherein the thermal stress element consists of a material with a thermal expansion coefficient αth which is smaller than 0.5*10−6 K−1 in a temperature range from 20° C. to 300° C., and
- wherein the thermal stress element is arranged such that it adjoins a region of the waveguide for which, during operation of the laser diode, the greatest temperature gradient is present as a function of the lateral direction.
5 more elements
A method for manufacturing an edge emitting laser diode, comprising:
- manufacturing a semiconductor layer stack, wherein the growth direction of the semiconductor layer stack defines a vertical direction;
- and
- wherein an active layer and a waveguide layer are provided in the semiconductor layer stack;
- characterized in that
- a thermal stress element is arranged such that it adjoins a region of the waveguide for which, during operation of the laser diode, the greatest temperature gradient is present as a function of the lateral direction such that
- the thermal stress element generates a thermally induced mechanical stress in the waveguide layer during operation of the laser diode, which stress counteracts the formation of a thermal lens,
- wherein the thermal stress element is made of a material having a coefficient of thermal expansion αth which is smaller than 0.5*10−6 K−1 in a temperature range from 20° C. to 300° C.
4 more elements
Dependencies are inferred from the claim text.