Nitride-based semiconductor light-emitting element and manufacturing method thereof, and manufacturing method of nitride-based semiconductor crystal

A manufacturing method of a nitride-based semiconductor light-emitting element, the manufacturing method comprising:

• forming an n-type nitride-based semiconductor layer;
• forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor;
• forming, on the light emission layer, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3;
• and
• annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen,
• wherein a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant,
• a hydrogen concentration of the light emission layer is at most 2.0×1017 atom/cm3, and the annealing includes:
• first annealing of annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an inert gas atmosphere;
• and
• second annealing of annealing the p-type nitride-based semiconductor layer at a temperature of at most 800 degrees Celsius in an oxidizing gas atmosphere after the first annealing.

A manufacturing method of a nitride-based semiconductor crystal, the manufacturing method comprising:

• forming, in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor crystal while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3;
• first annealing of annealing the p-type nitride-based semiconductor crystal at a temperature of at least 800 degrees Celsius in an inert gas atmosphere;
• and
• second annealing of annealing the p-type nitride-based semiconductor crystal at a temperature of at most 800 degrees Celsius in an oxidizing gas atmosphere after the first annealing,
• wherein a hydrogen concentration of the p-type nitride-based semiconductor crystal after the second annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant.