Semiconductor lasers with substrate mode suppression layers

A semiconductor laser with a substrate mode suppression layer, comprising a substrate, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, an electron blocking layer, and a second limiting layer sequentially stacked from bottom to top, wherein the first limiting layer includes a first sub-limiting layer, the substrate mode suppression layer, and a second sub-limiting layer sequentially stacked from bottom to top;

• a Si/C concentration ratio of an element Si to an element C of the substrate mode suppression layer is greater than or equal to a Si/C concentration ratio of an element Si to an element C of the first sub-limiting layer, and the Si/C concentration ratio of the element Si to the element C of the first sub-limiting layer is greater than or equal to a Si/C concentration ratio of an element Si to an element C of the second sub-limiting layer;
• the Si/C concentration ratio of the element Si to the element C of the substrate mode suppression layer is within a range of 200-8000;
• an In/Al concentration ratio of an element In to an element Al of the substrate mode suppression layer is greater than or equal to an In/Al concentration ratio of an element In to an element Al of the first sub-limiting layer, and the In/Al concentration ratio of the element In to the element Al of the first sub-limiting layer is greater than or equal to an In/Al concentration ratio of an element In to an element Al of the second sub-limiting layer;
• and
• an H/C concentration ratio of an element H to an element C of the substrate mode suppression layer is greater than or equal to an H/C concentration ratio of an element H to an element C of the second sub-limiting layer, and the H/C concentration ratio of the element H to the element C of the second sub-limiting layer is greater than or equal to an H/C concentration ratio of an element H to an element C of the first sub-limiting layer.