Light emitting device package

A light emitting device package, comprising:

• a heat dissipation frame;
• a first electrode frame and a second electrode frame arranged adjacent to one side of the heat dissipation frame;
• an electrodeless frame disposed between the first electrode frame and the second electrode frame;
• a first molding surrounding the heat dissipation frame, the first electrode frame, the second electrode frame, and the electrodeless frame;
• at least one reinforcing molding disposed on the first molding and covering one area of the electrodeless frame and at least one area of the first electrode frame or the second electrode frame;
• a first semiconductor light emitting device disposed on the heat dissipation frame, the first semiconductor light emitting device comprising a first semiconductor light emitting structure and a first pad and a second pad connected to the first semiconductor light emitting structure;
• a second semiconductor light emitting device disposed on the heat dissipation frame, the second semiconductor light emitting device comprising a second semiconductor light emitting structure and a first pad and a second pad connected to the second semiconductor light emitting structure;
• a wavelength conversion layer disposed on the first semiconductor light emitting device and the second semiconductor light emitting device;
• a first bonding wire connected to the first pad of the first semiconductor light emitting device and the first electrode frame;
• a second bonding wire connected to the second pad of the second semiconductor light emitting device and the second electrode frame;
• a first inter-chip bonding wire connecting the second pad of the first semiconductor light emitting device to the electrodeless frame;
• a second inter-chip bonding wire connecting the first pad of the second semiconductor light emitting device to the electrodeless frame;
• and
• a second molding surrounding the first semiconductor light emitting device, the second semiconductor light emitting device, the first bonding wire, the second bonding wire, the first inter-chip bonding wire, and the second inter-chip bonding wire,
• wherein the at least one reinforcing molding comprises:
• a first reinforcing molding comprising a first body that covers a first area of the electrodeless frame and one area of the first electrode frame;
• and
• a second reinforcing molding comprising a second body that covers a second area of the electrodeless frame and one area of the second electrode frame.

A light emitting device package, comprising:

• a heat dissipation frame;
• a first electrode frame and a second electrode frame arranged adjacent to one side of the heat dissipation frame;
• a first molding surrounding the heat dissipation frame, the first electrode frame, and the second electrode frame;
• a plurality of semiconductor light emitting devices disposed on the heat dissipation frame along the one side of the heat dissipation frame and each comprising a first pad and a second pad, the plurality of semiconductor light emitting devices comprising a first semiconductor light emitting device disposed at one end of the plurality of semiconductor light emitting devices, and a second semiconductor light emitting device disposed at an opposite end of the plurality of semiconductor light emitting devices;
• a wavelength conversion layer disposed on the plurality of semiconductor light emitting devices;
• a first bonding wire connected to the first pad of the first semiconductor light emitting device and the first electrode frame;
• a second bonding wire connected to the second pad of the second semiconductor light emitting device and the second electrode frame;
• a plurality of inter-chip bonding wires that each connect the first pad of a respective one of the plurality of semiconductor light emitting devices to the second pad of another respective one of the plurality of semiconductor light emitting devices that is adjacent to the respective one of the plurality of semiconductor light emitting devices;
• and
• a second molding surrounding the plurality of semiconductor light emitting devices, the first bonding wire, the second bonding wire, and the plurality of inter-chip bonding wires,
• wherein:
• the heat dissipation frame includes a groove formed between the first semiconductor light emitting device and the second semiconductor light emitting device, or
• the first semiconductor light emitting device and the second semiconductor light emitting device are provided on a same substrate.