Light emitting device and production method thereof

A light emitting device comprising:

• a supporting substrate;
• at least one light emitting unit including
• a first electrically conductive layer having a conductive base portion that is disposed on said supporting substrate, and a conductive protrusion portion that extends from said conductive base portion away from said supporting substrate,
• an insulating layer having an insulating base portion that is disposed on said first electrically conductive layer opposite to said supporting substrate, and an insulating protrusion portion that extends form said insulating base portion away from said supporting substrate, said insulating protrusion portion surrounding said conductive protrusion portion of said first electrically conductive layer, and
• a semiconductor layer structure disposed on said insulating layer and said first electrically conductive layer opposite to said supporting substrate, and including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, said second-type semiconductor layer, said active layer, and said first-type semiconductor layer being sequentially disposed on said insulating base portion of said insulating layer in such order, said semiconductor layer structure having at least one recess that extends from said second-type semiconductor layer through said active layer to said first-type semiconductor layer, said conductive protrusion portion of said first electrically conductive layer and said insulating protrusion portion of said insulating layer extending into said recess, said conductive protrusion portion of said first electrically conductive layer being disposed in contact with a bottom surface of said first-type semiconductor layer facing toward said supporting substrate;
• a second electrically conductive layer disposed on said insulating base portion of said insulating layer opposite to said first electrically conductive layer, said second electrically conductive layer being electrically connected with said semiconductor layer structure;
• a first electrode electrically connected to said first electrically conductive layer;
• and
• a second electrode electrically connected to said second electrically conductive layer,
• wherein a contact area between said conductive protrusion portion of said first electrically conductive layer and said first-type semiconductor layer is larger than 1.5% of an area of said bottom surface of said first-type semiconductor layer.