Display device having a first transistor including a crystalline silicon semiconductor layer and a second transistor including an oxide semiconductor layer

A display device, comprising:

• a crystalline silicon semiconductor layer, a first gate insulating film, a first gate electrode, a first interlayer insulating film, a lower metal layer, an oxide semiconductor layer, a second gate insulating film, a second gate electrode, a second interlayer insulating film, and an upper metal layer, all of which are provided above a substrate in a stated order;
• and
• a first transistor including the crystalline silicon semiconductor layer, and a second transistor including the oxide semiconductor layer, wherein
• the crystalline silicon semiconductor layer includes a first channel region and a first conductor region,
• the oxide semiconductor layer includes a second channel region and a second conductor region,
• the first gate insulating film and the first interlayer insulating film are provided with a first contact hole exposing the first conductor region and electrically connecting the first conductor region to the second conductor region,
• the lower metal layer includes a contact wire in contact with the second conductor region,
• the upper metal layer includes an upper wire,
• the second interlayer insulating film is provided with a second contact hole in which the upper wire overlaps the contact wire, and
• the second conductor region and the upper wire are electrically connected to each other through the contact wire.