Semiconductor devices with ferroelectric layer and methods of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Chieh Huang, Po-Ting Lin, Hai-Ching Chen, Sai-Hooi Yeong, Yu-Ming Lin, Chung-Te Lin
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Abstract
A semiconductor device is described. The semiconductor device includes a substrate and a metal layer disposed on the substrate. A seed layer is formed on the metal layer. A ferroelectric gate layer is formed on the seed layer. A channel layer is formed over the ferroelectric gate layer. The seed layer is arranged to increase the orthorhombic phase fraction of the ferroelectric gate layer.
Claims20
A ferroelectric semiconductor device, comprising:
- a substrate;
- a blocking layer disposed on a channel of the substrate;
- a first seed layer disposed on the blocking layer;
- a ferroelectric gate layer formed on the first seed layer;
- and
- an electrode formed over the ferroelectric gate layer;
- wherein the first seed layer is arranged to increase an orthorhombic phase fraction of the ferroelectric gate layer and the blocking layer is arranged to increase a band offset between the channel and the blocking layer and to reduce oxygen vacancies between the blocking layer and the channel.
A ferroelectric semiconductor device, comprising:
- a substrate;
- a channel formed in the substrate
- a first seed layer disposed over the channel;
- a ferroelectric gate layer formed on the first seed layer;
- and
- an electrode formed over the ferroelectric gate layer,
- wherein the first seed layer is arranged to increase an orthorhombic phase fraction of the ferroelectric gate layer;
- and
- further comprising a second seed layer disposed on the ferroelectric gate layer, the second seed layer arranged to increase the orthorhombic phase fraction of the ferroelectric gate layer.
A ferroelectric semiconductor device, comprising:
- a substrate;
- a blocking layer disposed on a channel of the substrate;
- a ferroelectric gate layer disposed over the blocking layer;
- a seed layer disposed on the ferroelectric gate layer;
- and
- an electrode formed over the ferroelectric gate layer,
- wherein the seed layer is arranged to increase an orthorhombic phase fraction of the ferroelectric gate layer and the blocking layer is arranged to increase the band offset between the channel and the blocking layer and to reduce oxygen vacancies between the blocking layer and the channel.
Dependencies are inferred from the claim text.