Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same

A semiconductor integrated circuit device comprising:

• a channel layer;
• a barrier layer on the channel layer and configured to induce a 2-dimensional electron gas (2DEG) in the channel layer;
• a first p-type semiconductor layer and a second p-type semiconductor layer spaced apart from each other on the barrier layer;
• and
• a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer,
• wherein the passivation layer is configured to partially inactivate at least one of a dopant of the first p-type semiconductor layer or a dopant of the second p-type semiconductor layer.