Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorYasunobu Saito
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Abstract
According to one embodiment, a semiconductor device comprises a first nitride semiconductor layer on a substrate and a second nitride semiconductor layer on the first nitride semiconductor layer. The second nitride semiconductor layer has a larger bandgap than the first nitride semiconductor layer. Source and drain electrodes are on the second nitride semiconductor layer. A gate electrode is between the source electrode and the drain electrode. A third nitride semiconductor layer of p-type conductivity is on the second nitride semiconductor layer between the drain electrode and the gate electrode and spaced from the drain electrode.
Claims20
A semiconductor device, comprising:
- a first nitride semiconductor layer on a substrate;
- a source electrode on the first nitride semiconductor layer;
- a drain electrode on the first nitride semiconductor layer;
- a gate electrode between the source electrode and the drain electrode;
- a second nitride semiconductor region between the first nitride semiconductor layer and the drain electrode and being a material having a larger bandgap than the first nitride semiconductor layer;
- a third nitride semiconductor region directly on the first nitride semiconductor layer, a lateral position of the third nitride semiconductor region being between a lateral position of a drain-side edge of the gate electrode and a lateral position of a gate-side edge of the drain electrode, a lateral surface of third nitride semiconductor region directly contacting the second nitride semiconductor region, the third nitride semiconductor region being a material having a bandgap larger than the first nitride semiconductor layer and less than or equal to the material of the second nitride semiconductor region;
- and
- a fourth nitride semiconductor region between the first nitride semiconductor layer and the source electrode and being a material having a larger bandgap than the first nitride semiconductor layer and the material of the third nitride semiconductor region, wherein
- the gate electrode is between the third nitride semiconductor region and the fourth nitride semiconductor region in a direction substantially parallel to a plane of the substrate.
Dependencies are inferred from the claim text.