Semiconductor device having conductive field plate overlapping an edge of an active region

A semiconductor device comprising:

• an isolation structure in a substrate;
• a gate structure over an active region of the substrate, wherein the isolation structure surrounds the active region, the gate structure comprising a first section and a second section, and the first section extends parallel to the second section;
• a conductive field plate over the substrate, the conductive field plate extending between the first section and the second section and overlapping an edge of the active region, wherein a portion of the conductive field plate extends beyond the edge of the active region, and the conductive field plate comprises a conductive layer having a first portion and a second portion, and the first portion is thicker than the second portion;
• and
• a first well in the substrate, wherein the first well overlaps the edge of the active region, and the first well extends underneath the isolation structure, and the conductive field plate extends beyond an outer-most edge of the first well.

A semiconductor device comprising:

• an isolation structure in a substrate;
• a gate structure over an active region of the substrate, wherein the isolation structure surrounds the active region, the gate structure comprising a first section and a second section, and the first section extends parallel to the second section, and the gate structure comprises a gate dielectric layer having a variable thickness;
• a conductive field plate over the substrate, the conductive field plate extending between the first section and the second section and overlapping an edge of the active region, wherein a portion of the conductive field plate extends beyond the edge of the active region;
• and
• a first well in the substrate, wherein the first well overlaps the edge of the active region, and the first well extends underneath the isolation structure, and the conductive field plate extends beyond an outer-most edge of the first well.