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US 12,119,382 B2Granted
Buffer layer structure to improve gan semiconductors
AssigneeGlobalWafers Co., Ltd.
InventorsJia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu, Wen-Ching Hsu, Manhsuan Lin
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Abstract
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
Claims14
A heterostructure, comprising:
- a substrate;
- and
- a buffer layer comprising a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0;
- wherein the buffer layer has a first region, comprising at least two layers, one according to a first layer profile and another according to a second layer profile, wherein the first layer profile has a higher aluminum content than the second layer profile;
- wherein the buffer layer has a second region comprising at least two layers, one according to a third layer profile and another according to a fourth layer profile, wherein the third layer profile has a higher aluminum content than the fourth layer profile and the fourth layer profile at any point along a growth direction has a lower aluminum content than the second layer profile of the first region at any point along the growth direction;
- wherein the buffer layer has a third region comprising at least two layers, one according to a fifth layer profile and another according to a sixth layer profile, wherein the fifth layer profile has a higher aluminum content than the sixth layer profile and the sixth layer profile at any point along the growth direction has a lower aluminum content than the fourth layer profile of the second region at any point along the growth direction;
- and
- wherein the aluminum content varies continuously throughout a thickness of the even numbered layer profiles.
5 more elements
A heterostructure, comprising:
- a substrate;
- a buffer layer having a composition AlxInyGa1-x-yN, where x≤1 and y≥0;
- a plurality of layers;
- and
- a first region comprising at least two layers, one with a first layer profile and another with a second layer profile, wherein the first layer profile has a continuously decreasing aluminum concentration and the second layer profile has a continuously increasing aluminum concentration;
- a second region comprising at least two layers, one with a third layer profile and another with a fourth layer profile, wherein the third layer profile has a continuously decreasing aluminum concentration and the fourth layer profile has a continuously increasing aluminum concentration;
- a third region comprising at least two layers, one with a fifth layer profile and another with a sixth layer profile, wherein the fifth layer profile has a continuously decreasing aluminum concentration and the sixth layer profile has a continuously increasing aluminum concentration;
- and
- wherein the first layer profile terminates at an aluminum content that is higher than the aluminum content at the termination of the third layer profile.
6 more elements
Dependencies are inferred from the claim text.