Method for making semiconductor device including superlattice with oxygen and carbon monolayers

A method for making a semiconductor device comprising:

• forming a superlattice adjacent a semiconductor layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• the at least one non-semiconductor monolayer in a first group of layers of the superlattice comprising oxygen and devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice comprising carbon and devoid of oxygen;
• and
• performing an etch while using the superlattice as an etch stop layer.

A method for making a semiconductor device comprising:

• forming a superlattice adjacent a semiconductor layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• the at least one non-semiconductor monolayer in a first group of layers of the superlattice comprising oxygen and devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice comprising carbon and oxygen;
• and
• performing an etch while using the superlattice as an etch stop layer.