SiC devices with shielding structure

A method of producing a semiconductor device, the method comprising:

• forming a device structure in or on the SiC substrate, the device structure subject to an electric field during operation of the semiconductor device;
• forming a current-conduction region of a first conductivity type in the SiC substrate adjoining the device structure;
• and
• forming a shielding region of a second conductivity type laterally adjacent to the current-conduction region, the shielding region configured to at least partly shield the device structure from the electric field,
• wherein the current-conduction region and the shielding region are formed such that:
• the shielding region has a higher net doping concentration than the current-conduction region;
• the shielding region has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region;
• the current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region;
• and
• L/d is in a range of 1 to 10.