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US 12,119,359 B2Granted
Imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorKoichi Baba
Life of this patent
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Abstract
An imaging device according to an embodiment of the present disclosure includes: a first substrate including, in a first semiconductor substrate, a sensor pixel that performs photoelectric conversion; a second substrate including, in a second semiconductor substrate, a readout circuit that outputs a pixel signal based on charges outputted from the sensor pixel, in which the second substrate is stacked on the first substrate; and a first hydrogen diffusion prevention layer provided between the first semiconductor substrate and the second semiconductor substrate.
Claims17
An imaging device comprising:
- a first substrate including, in a first semiconductor substrate, a sensor pixel that performs photoelectric conversion, and the first semiconductor substrate defines a first surface and a second surface such that the first surface is opposite the second surface;
- a second substrate including, in a second semiconductor substrate, a readout circuit that outputs a pixel signal based on charges outputted from the sensor pixel, the second substrate being stacked on the first substrate, such that the second substrate is opposed to the first surface of the first semiconductor substrate;
- a first hydrogen diffusion prevention layer abutting the first surface, disposed between the first semiconductor substrate and the second semiconductor substrate;
- and
- a second hydrogen diffusion prevention layer abutting the second surface.
2 more elements
Dependencies are inferred from the claim text.