Back to results
US 12,119,348 B2Granted
Stacked device structures and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Liang Cheng, Ying-Hsun Chen
Life of this patent
Estimating the term…
Abstract
A complementary metal oxide semiconductor (CMOS) device and method of making including a transistor of a first type formed on a first substrate and a transistor of a second type formed on a second substrate. The CMOS device is formed when the first substrate is bonded to the second substrate.
Claims20
A complementary metal oxide semiconductor (CMOS) device comprising:
- a transistor of a first type comprising:
- a pair of gate stacks including a metal layer on a dielectric layer;
- a semiconductor layer comprising an active region between the pair of gate stacks;
- and
- a contact via in the dielectric layer contacting the active region of the semiconductor layer between the pair of gate stacks;
- and
- a transistor of a second type bonded to the transistor of the first type and electrically coupled to the transistor of the first type by the contact via, wherein the contact via and the dielectric layer are located between the pair of gate stacks and the transistor of the second type.
4 more elements
An integrated circuit comprising:
- complementary metal oxide semiconductor (CMOS) transistors comprising:
- transistors of a first type comprising:
- a pair of gate stacks including a metal layer on a dielectric layer;
- a semiconductor layer comprising an active region between the pair of gate stacks;
- and
- a backside contact in the dielectric layer contacting the active region of the semiconductor layer between the pair of gate stacks;
- and
- transistors of a second type comprising a back end of the line (BEOL) contact,
- and wherein the backside contact of the transistors of the first type is bonded to the BEOL contact of the transistors of the second type to form the CMOS transistors,
- wherein the backside contact and the dielectric layer are located between the pair of gate stacks and the transistors of the second type.
7 more elements
A semiconductor device, comprising:
- a fin-shaped field effect transistor (FinFET) comprising:
- an interlayer dielectric (ILD) layer;
- and
- an interconnect in the ILD layer;
- and
- a gate-all-around field effect transistor (GAAFET) bonded to the FinFET, comprising:
- a pair of gate stacks including a metal layer on a dielectric layer;
- a semiconductor layer comprising an active region between the pair of gate stacks;
- and
- a contact via in the dielectric layer contacting the active region of the semiconductor layer between the pair of gate stacks and electrically coupled to the interconnect of the FinFET, wherein the contact via and the dielectric layer are located between the pair of gate stacks and the FinFET.
7 more elements
Dependencies are inferred from the claim text.