Method of manufacturing a horizontal-nanosheet field-effect transistor

A method of manufacturing an integrated circuit device, the method comprising:

• forming a fin-type active region extending lengthwise in a first horizontal direction;
• forming a nanosheet stack on the fin-type active region, the nanosheet stack including a plurality of nanosheets which overlap each other in a vertical direction on the fin-type active region;
• partially removing a first nanosheet, which is closest to the fin-type active region from among the plurality of nanosheets, to form a pair of nanosheet indent regions on both sides of the first nanosheet in the first horizontal direction;
• and
• forming a pair of source/drain regions on the fin-type active region, the pair of source/drain regions being spaced apart from each other with the nanosheet stack between the pair of source/drain regions, each of pair of source/drain regions comprising a source/drain main region and a source/drain protruding region, wherein the source/drain main region does not overlap the nanosheet stack in the vertical direction, and the source/drain protruding region protrudes from the source/drain main region toward the first nanosheet.

A method of manufacturing an integrated circuit device, the method comprising:

• forming a structure including a fin-type active region extending lengthwise in a first horizontal direction;
• forming a pair of nanosheet stacks on the fin-type active region, each of the pair of nanosheet stacks including a plurality of nanosheets which overlap each other in a vertical direction on the fin-type active region, wherein the plurality of nanosheets includes a first nanosheet closest to the fin-type active region from among the plurality of nanosheets, and a composition of the first nanosheet is different from a composition of nanosheets other than the first nanosheet, from among the plurality of nanosheets;
• reducing a length of the first nanosheet in the first horizontal direction by selectively etching only the first nanosheet from among the plurality of nanosheets;
• and
• forming a source/drain region between the pair of nanosheet stacks on the fin-type active region, the source/drain region comprising a source/drain main region and a pair of source/drain protruding regions, wherein the source/drain main region is between the pair of nanosheet stacks, and each of the pair of source/drain protruding regions is in physical contact with the first nanosheet of one of the pair of nanosheet stacks.