Semiconductor structure having a semiconductor substrate and an isolation component

A semiconductor structure, comprising:

• a) a P-type semiconductor substrate having a first region, a second region comprising an N-type second well region, and an isolation region disposed between the first region and the second region;
• b) an isolation component located in the isolation region;
• c) wherein the isolation component is configured to recombine first carriers flowing from the first region toward the second region, and to extract second carriers flowing from the second region toward the first region, and the electric potential connected to the isolation component is not higher than the electric potential of the semiconductor substrate;
• d) wherein the isolation component comprises a trench and a P-type contact region located on a surface of the isolation region and in contact with the trench, and wherein the isolation component is without an N-type doped region, wherein a depth of the P-type contact region is less than a depth of the trench;
• and
• e) wherein a second N-type MOSFET is disposed in the second well region and a first N-type MOSFET is disposed in the first region, wherein a parasitic PNP transistor is formed by a P-type body region of the second N-type MOSFET, the second well region, and the semiconductor substrate, and wherein a parasitic NPN transistor is formed by the second well region, the semiconductor substrate, and an N-type region of the first N-type MOSFET.