Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same

A resistor with GaN structures, comprising:

• a GaN layer with a two-dimensional electron gas (2DEG) resistor region and an undoped polysilicon resistor region;
• an AlGaN barrier layer on said GaN layer in said 2DEG resistor region;
• multiple p-type doped GaN capping layers arranged in a staggered arrangement on said AlGaN barrier layer and not directly connected with any interconnects or not applied with voltages, so that said GaN layer not covered by said p-type doped GaN capping layers in said 2DEG resistor region forms a winding pattern and is converted into a 2DEG resistor;
• a passivation layer on said GaN layer;
• and
• an undoped polysilicon layer on said passivation layer in said undoped polysilicon resistor region and functioning as an undoped polysilicon resistor.