Electrostatic discharge diode having dielectric isolation layer

A semiconductor structure, comprising:

• a first plurality of gates disposed on a semiconductor substrate on a first side of a trench dielectric layer disposed in a trench of the semiconductor substrate;
• an inter-layer dielectric layer disposed on and in contact with the trench dielectric layer;
• a first plurality of source/drain regions of a first conductivity type disposed between the first plurality of gates and in contact with the semiconductor substrate;
• a second plurality of gates disposed on the semiconductor substrate on a second side of the trench dielectric layer;
• a second plurality of source/drain regions of a second conductivity type opposite to the first conductivity type disposed between the second plurality of gates and in contact with the semiconductor substrate;
• a first dielectric isolation layer disposed on the semiconductor substrate between a portion having the first conductivity type of the first plurality of source/drain regions and the trench dielectric layer, and disposed adjacent to and contacting a top surface of the first side of the trench dielectric layer and a bottom surface and a first side surface of the inter-layer dielectric layer;
• and
• a second dielectric isolation layer disposed on the semiconductor substrate between a portion having the second conductivity type of the second plurality of source/drain regions and the trench dielectric layer, and disposed adjacent to and contacting the top surface of the second side of the trench dielectric layer and the bottom surface and a second side surface opposite to the first side surface of the inter-layer dielectric layer;
• wherein the first plurality of source/drain regions, the second plurality of source/drain regions, the first and second dielectric isolation layers and the trench dielectric layer together form a diode junction.