Back to results
US 12,119,337 B2Granted
Method of manufacturing a semiconductor device
AssigneeKioxia Corporation
InventorJunichi Shibata
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a first substrate including an element region, a peripheral region that surrounds the element region, a first insulator with a first recess portion in the peripheral region, a first metal layer in the element region, and a first conductor in the peripheral region to surround the element region. A second substrate has an element region, a peripheral region that surrounds the element region, a second insulator with a second recess portion that faces the first recess portion, a second metal layer in contact with the first metal layer, and a second conductor that surrounds the element region of the second substrate.
Claims20
A manufacturing method of a semiconductor device, comprising:
- attaching a first substrate to a second substrate, wherein
- the first substrate includes:
- a first element region,
- a first peripheral region that surrounds the first element region,
- a first insulator in the first element region and the first peripheral region and having a first recess portion in the first peripheral region,
- a first metal layer in the first element region and exposed at an uppermost surface of the first substrate,
- a first conductor in the first peripheral region in the first insulator below the uppermost surface of the first substrate, the first conductor surrounding the first element region, and
- a first insulating layer between the first conductor and the interface between the first substrate and the second substrate, the first insulating layer comprising silicon and nitrogen;
- the second substrate includes:
- a second element region,
- a second peripheral region that surrounds the second element region,
- a second insulator in the second element region and the second peripheral region, the second insulator having a second recess portion in the second peripheral region,
- a second metal layer in the second element region and exposed at an uppermost surface of the second substrate,
- a second conductor in the second peripheral region in the second insulator below the uppermost surface of the second substrate, the second conductor surrounding the second element region, and
- a second insulating layer between the second conductor and the interface between the first substrate and the second substrate, the second insulating layer comprising silicon and nitrogen;
- and
- after the first substrate and the second substrate are attached, the first metal layer and the second metal layer directly contact one another, and the first recess portion and the second recess portion are connected to one another.
14 more elements
A manufacturing method of a semiconductor device, comprising:
- bonding a first wafer and a second wafer;
- and
- cutting the first wafer and the second wafer into dies after bonding, wherein
- the first wafer includes:
- a first element region,
- a first peripheral region that surrounds the first element region,
- a first insulator in the first element region and the first peripheral region and having a first recess portion in the first peripheral region,
- a first metal layer in the first element region and exposed at an uppermost surface of the first wafer,
- a first conductor in the first peripheral region in the first insulator below the uppermost surface of the first wafer, the first conductor surrounding the first element region, and
- a first insulating layer between the first conductor and the interface between the first wafer and the second wafer, the first insulating layer comprising silicon and nitrogen;
- the second wafer includes:
- a second element region,
- a second peripheral region that surrounds the second element region,
- a second insulator in the second element region and the second peripheral region, the second insulator having a second recess portion in the second peripheral region,
- a second metal layer in the second element region and exposed at an uppermost surface of the second wafer,
- a second conductor in the second peripheral region in the second insulator below the uppermost surface of the second wafer, the second conductor surrounding the second element region, and
- a second insulating layer between the second conductor and the interface between the first wafer and the second wafer, the second insulating layer comprising silicon and nitrogen;
- and
- after the first wafer and the second wafer are bonded, the first metal layer and the second metal layer directly contact one another, and the first recess portion and the second recess portion are connected to one another.
16 more elements
Dependencies are inferred from the claim text.