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US 12,119,318 B2Granted
Bonding structure and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Wei Chen, Jie Chen, Ming-Fa Chen
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Abstract
A device includes an interconnect structure over a substrate, multiple first conductive pads over and connected to the interconnect structure, a planarization stop layer extending over the sidewalls and top surfaces of the first conductive pads of the multiple first conductive pads, a surface dielectric layer extending over the planarization stop layer, and multiple first bonding pads within the surface dielectric layer and connected to the multiple first conductive pads.
Claims20
A method comprising:
- forming a first insulating layer over an interconnect structure, wherein the interconnect structure comprises a first conductive line and a second conductive line;
- forming a conductive element over the first insulating layer and penetrating the first insulating layer to physically contact a first conductive line;
- forming a first stop layer that extends conformally on surfaces of the first insulating layer and the conductive element;
- forming a second insulating layer on the first stop layer, wherein the second insulating layer laterally surrounds the first conductive feature;
- forming a second stop layer over the first stop layer and the second insulating layer;
- forming a bonding layer on the second stop layer;
- forming a first bonding pad penetrating the bonding layer, the second stop layer, and the first stop layer to physically contact the conductive element;
- and
- forming a second bonding pad penetrating the bonding layer, the second stop layer, the second insulating layer, the first stop layer, and the first insulating layer to physically contact the second conductive line.
6 more elements
A method comprising:
- forming a first semiconductor device, comprising:
- depositing a first stop layer on a first conductive pad;
- depositing a first insulating layer on the first stop layer;
- depositing a second stop layer on the first stop layer and the first insulating layer;
- forming a first bonding layer on the second stop layer;
- and
- forming a first bonding pad penetrating the first bonding layer to contact the first conductive pad;
- forming a second semiconductor device, comprising:
- depositing a third stop layer on a second conductive pad;
- depositing a second insulating layer on the third stop layer;
- depositing a fourth stop layer on the third stop layer and the second insulating layer;
- forming a second bonding layer on the fourth stop layer;
- and
- forming a second bonding pad penetrating the second bonding layer to contact the second conductive pad;
- and
- bonding the first bonding layer to the second bonding layer and bonding the first bonding pad to the second bonding pad.
13 more elements
A device comprising:
- a first conductive element on a top surface of an interconnect structure, wherein the first conductive element is electrically connected to the interconnect structure;
- a second conductive element on the top surface of the interconnect structure, wherein the second conductive element is electrically isolated from the interconnect structure;
- a planarization stop layer conformally covering the first conductive element, the second conductive element, and the top surface of the interconnect structure;
- a first dielectric material over the planarization stop layer and between the first conductive element and the second conductive element;
- an etch stop layer over the planarization stop layer and the first dielectric material;
- a second dielectric layer over the etch stop layer;
- a first conductive feature extending through the second dielectric layer to physically contact the first conductive element;
- and
- a second conductive feature extending through the second dielectric layer to physically contact the second conductive element.
6 more elements
Dependencies are inferred from the claim text.