Channelized filter using semiconductor fabrication

A semiconductor technology implemented cover suited for enhancing electromagnetic field isolation for high-frequency circuits disposed on a substantially planar dielectric substrate having first metal traces that carry a high-frequency signal and second metal traces that establish a reference ground, the cover comprising;

• a silicon enclosure with externally extending walls about the periphery of the silicon enclosure, ends of the external walls dimensioned to contact second metal traces about the periphery of the substrate when the cover is placed in engagement with the substrate;
• the silicon enclosure also having internal extending walls interior of the external walls that define cavities in conjunction with the external walls, ends of the internal walls dimensioned to contact respective second metal traces on the interior of the substrate when the cover is placed in engagement with the substrate;
• a layer of conductive metal covers the interior surface of the enclosure, the internal walls, the interior surface of the external walls, and the ends of the internal and external walls;
• the silicon enclosure, when the cover is placed in engagement with the substrate, providing substantially continuous areas of metal about the periphery of the silicon enclosure defined by the external walls and the metal ends of the external walls;
• the cavities are dimensioned to substantially surround respective parts of the high frequency circuits when the cover is placed in engagement with the substrate thereby providing electromagnetic field isolation between the parts of the high frequency circuit by the surrounding metal surfaces of the cavities;
• the ends of the external and internal walls are dimensioned to provide a conductive engagement with respective second metal traces, when the cover is placed in engagement with the substrate, to establish a common reference ground therebetween.