Amplifier device

An amplifier device comprising:

• a semiconductor chip including a semiconductor substrate with first and second end edges facing each other, a plurality of transistors each having a source electrode, a gate electrode, and a drain electrode on the semiconductor substrate, a gate pad group including a plurality of gate pads disposed on the semiconductor substrate along the first end edge and connected to the respective gate electrodes of the plurality of transistors, a drain pad group including a plurality of drain pads disposed on the semiconductor substrate along the second end edge and connected to the respective drain electrodes of the plurality of transistors, and a source pad group including a plurality of source pads connected to the respective source electrodes of the plurality of transistors;
• a package including a metal base to which a bottom surface of the semiconductor chip is bonded, an insulating side wall configured to surround the semiconductor chip, an input lead connected to the gate pad group and configured to extend from an inside to an outside of the side wall, and an output lead connected to the drain pad group and configured to extend from the inside to the outside of the side wall;
• and
• first and second feedback circuits each including a dielectric substrate provided on the metal base, a feedback resistor disposed on the dielectric substrate, and a capacitor connected in series with the feedback resistor, and electrically connected between the gate pad group and the drain pad group,
• wherein the first feedback circuit is disposed on the base on one side of the semiconductor chip in an extension direction of the first and second end edges, and
• the second feedback circuit is disposed on the base on another side of the semiconductor chip in the extension direction.