Semiconductor device

A semiconductor device comprising:

• a first conductive plate including a first main surface perpendicular to a thickness direction of the first conductive plate;
• a second conductive plate including a second main surface perpendicular to the thickness direction, the second conductive plate being spaced apart from the first conductive plate in a first direction perpendicular to the thickness direction;
• a plurality of first switching elements electrically bonded to the first conductive plate and electrically connected to the second conductive plate;
• a plurality of second switching elements electrically bonded to the second conductive plate;
• a first supply terminal electrically bonded to the first conductive plate;
• a second supply terminal having a region that overlaps with the first supply terminal as viewed in the thickness direction, the second supply terminal being spaced apart from the first conductive plate and the first supply terminal in the thickness direction;
• a terminal insulating member being plate-shaped and interposed between the first supply terminal and the second supply terminal in the thickness direction, wherein
• the second supply terminal is electrically connected to the plurality of second switching elements,
• the terminal insulating member is greater in size than each of the first supply terminal and the second supply terminal in a second direction perpendicular to the thickness direction and the first direction;
• and
• an insulating layer including a main surface perpendicular to the thickness direction, wherein
• the first conductive plate and the second conductive plate are bonded to the main surface of the insulating layer,
• the first conductive plate and the second conductive plate have a thickness that is larger than a thickness of the insulating layer, and
• the first conductive plate and the second conductive plate each have a first layer and a second layer, the first layer being bonded to the main surface of the insulating layer, and the second layer being located on a side of the first layer opposite to the insulating layer in the thickness direction, and the second layer has a thickness that is larger than a thickness of the first layer.