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US 12,119,286 B2Granted
Die, memory and method of manufacturing die
AssigneeChangxin Memory Technologies, Inc.
InventorChihCheng Liu
Life of this patent
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Abstract
A die, a memory and a method of manufacturing the die are provided. The die includes a substrate and a conductive structure, where the substrate has an interconnection structure layer, the conductive structure includes a first conductive structure and a second conductive structure connected with the first conductive structure, the first conductive structure is connected with the interconnection structure layer, and a coefficient of thermal expansion of the first conductive structure is smaller than that of copper.
Claims19
A die, comprising:
- a substrate, wherein an interconnection structure layer is arranged on the substrate;
- and
- a conductive structure arranged within the substrate, wherein the conductive structure comprises a first conductive structure and a second conductive structure connected with the first conductive structure, the first conductive structure is connected with the interconnection structure layer, a coefficient of thermal expansion of the first conductive structure is smaller than a coefficient of thermal expansion of copper, and a coefficient of thermal expansion of the second conductive structure is smaller than the coefficient of thermal expansion of copper.
A method of manufacturing a die, comprising:
- providing a substrate, wherein an intermetallic dielectric layer is arranged on the substrate, and an etching stop layer is arranged within the intermetallic dielectric layer;
- forming a first conductive structure within the intermetallic dielectric layer, wherein a bottom of the first conductive structure is in contact with the etching stop layer, and a coefficient of thermal expansion of the first conductive structure is smaller than a coefficient of thermal expansion of copper;
- forming an interconnection structure layer on the intermetallic dielectric layer, wherein the interconnection structure layer is connected with one end of the first conductive structure away from the substrate;
- and
- forming a second conductive structure within the substrate, wherein the second conductive structure extends into the intermetallic dielectric layer and is connected with the first conductive structure.
2 more elements
Dependencies are inferred from the claim text.