Heat dissipation structure, method for forming heat dissipation structure, and semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorLuguang Wang
Life of this patent
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AssigneeChangxin Memory Technologies, Inc.
InventorLuguang Wang
Estimating the term…
Provided are a heat dissipation structure, a method for forming a heat dissipation structure, and a semiconductor structure. The heat dissipation structure includes a first heat dissipation ring and a second heat dissipation ring. The first heat dissipation ring is formed in a dielectric layer around a Through Silicon Via (TSV) and in contact with the TSV. The TSV passes through a silicon substrate and the dielectric layer. The second heat dissipation ring is formed around the first heat dissipation ring, and in contact with the first heat dissipation ring. The second heat dissipation ring has a heat dissipation gap within it. A dimension of the second heat dissipation ring in a first direction is less than that of the first heat dissipation ring in the first direction. The first direction is a thickness direction of the silicon substrate.
A heat dissipation structure, comprising
A method for forming a heat dissipation structure, comprising:
A semiconductor structure, at least comprising
Dependencies are inferred from the claim text.